Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm<sup>2</sup>) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li

doi:https://doi.org/10.7567/SSDM.2023.PS-4-08

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li¹, Bo Li¹, Zhengweng Ma¹, Huakai Yang¹, Shijie He¹, Jiajun Han², Yu Li¹, Xiaohua Li¹, Wei He¹, ^○Xinke - Liu¹ (1. Shenzhen Univ. (China), 2. South China Normal Univ. (China))

https://doi.org/10.7567/SSDM.2023.PS-4-08

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Password

Presentation information

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm2) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Password

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact