2023 International Conference on Solid State Devices and Materials

講演情報

Poster Session

04: Power / High‐speed Devices and Materials

[PS-4] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm2) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li1, Bo Li1, Zhengweng Ma1, Huakai Yang1, Shijie He1, Jiajun Han2, Yu Li1, Xiaohua Li1, Wei He1, Xinke - Liu1 (1. Shenzhen Univ. (China), 2. South China Normal Univ. (China))

https://doi.org/10.7567/SSDM.2023.PS-4-08

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