AlGaN/GaN MIS-HEMT on PVD-Grown AlN-on-Si wafer for Power Applications

Bing- Syuan Li

doi:https://doi.org/10.7567/SSDM.2023.PS-4-10

[PS-4-10] AlGaN/GaN MIS-HEMT on PVD-Grown AlN-on-Si wafer for Power Applications

^○Bing- Syuan Li¹, Tsung-Han Chiang², You-Chen Weng³, Tsung-Ying Yang², Edward Yi Chang^2,4, Chin-Han Chung², Michel Khoury⁵, Helen Zhao⁵ (1. Master’s Degree Program of Applied Science and Technology, College of Science, National Yang Ming Chiao Tung Univ. (Taiwan), 2. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 3. College of Photonics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of Materials Science and Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 5. Applied Materials, Ltd. (United States of America))

https://doi.org/10.7567/SSDM.2023.PS-4-10

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-10] AlGaN/GaN MIS-HEMT on PVD-Grown AlN-on-Si wafer for Power Applications

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