Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

Ming-Wen Lee

doi:https://doi.org/10.7567/SSDM.2023.PS-4-11

[PS-4-11] Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

^○Ming-Wen Lee^1,2, Yueh-Chin Lin¹, Cheng-Wei Chuang¹, Edward Yi Chang^1,3 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Department of Electronics and Computer Technology, Univ. of Granada (Spain), 3. Inst. of Microengineering and Nanoelectronics, Univ. Kebangsaan Malaysia (Malaysia))

https://doi.org/10.7567/SSDM.2023.PS-4-11

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-11] Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

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