GaAsSb/InGaAs tunnel FETs using thick SiO<sub>2</sub> mask for regrowth

Ruifeng Xu

doi:https://doi.org/10.7567/SSDM.2023.PS-4-16

講演情報

Poster Session

04: Power / High‐speed Devices and Materials

[PS-4] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-4-16] GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

Ruifeng Xu¹, ^○Jiawei Fan¹, Masakazu Arai², Yasuyuki Miyamoto¹ (1. Tokyo Tech (Japan), 2. Miyazaki Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-16

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-16] GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

パスワード

[PS-4-16] GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth