GaN Heterojunction Rectifier Diode with Low Turn-On Voltage and High Breakdown Voltage for Energy Harvesting

Naotaka Iwata

doi:https://doi.org/10.7567/SSDM.2023.PS-4-17

[PS-4-17 (Late News)] GaN Heterojunction Rectifier Diode with Low Turn-On Voltage and High Breakdown Voltage for Energy Harvesting

^○Naotaka Iwata¹, Kouki Hino², Maria Emma Castil Villamin³ (1. Toyota Tech. Inst. (Japan), 2. Toyota Tech. Inst. (Japan), 3. Toyota Tech. Inst. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-17

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-17 (Late News)] GaN Heterojunction Rectifier Diode with Low Turn-On Voltage and High Breakdown Voltage for Energy Harvesting

パスワード