Anti-relaxation of Tensile Lattice Strain in Si-Embedded Ge Strip Structure for Photonic Device Applications

Joshua Chombo

doi:https://doi.org/10.7567/SSDM.2023.PS-5-03

[PS-5-03] Anti-relaxation of Tensile Lattice Strain in Si-Embedded Ge Strip Structure for Photonic Device Applications

^○Joshua Chombo¹, Mohd Faiz Bin Amin¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Keisuke Yamane¹, Mingjun Jiang², Donghwan Ahn², Kazumi Wada³, Yasuhiko Ishikawa¹ (1. Toyohashi Univ. of Tech. (Japan), 2. Kookmin Univ. (Korea), 3. MIT (United States of America))

https://doi.org/10.7567/SSDM.2023.PS-5-03

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Presentation information

[PS-5] 05: Photonics: Devices / Integration / Related Technology

[PS-5-03] Anti-relaxation of Tensile Lattice Strain in Si-Embedded Ge Strip Structure for Photonic Device Applications

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