Thermoelectric Properties and Defects Formation in Mg2Sn1-xGex Epitaxial Thin Films Grown with High Mg Flux Rate

Kenneth Magallon Senados

doi:https://doi.org/10.7567/SSDM.2023.PS-6-08

[PS-6-08] Thermoelectric Properties and Defects Formation in Mg₂Sn_1-xGe_x Epitaxial Thin Films Grown with High Mg Flux Rate

^○Kenneth Magallon Senados^1,2, Takashi Aizawa², Isao Ohkubo², Takahiro Baba^1,2, Akira Uedono¹, Takao Mori^1,2, Takeaki Sakurai¹ (1. Univ. of Tsukuba (Japan), 2. National Inst. for Materials Science (Japan))

https://doi.org/10.7567/SSDM.2023.PS-6-08

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[PS-6] 06: Photovoltaics / Energy Harvesting / Battery‐related Technology

[PS-6-08] Thermoelectric Properties and Defects Formation in Mg₂Sn_1-xGe_x Epitaxial Thin Films Grown with High Mg Flux Rate

Password

Presentation information

[PS-6] 06: Photovoltaics / Energy Harvesting / Battery‐related Technology

[PS-6-08] Thermoelectric Properties and Defects Formation in Mg2Sn1-xGex Epitaxial Thin Films Grown with High Mg Flux Rate

Password

[PS-6-08] Thermoelectric Properties and Defects Formation in Mg₂Sn_1-xGe_x Epitaxial Thin Films Grown with High Mg Flux Rate