Control of Ge Nanowire Orientation in Selective-Area VLS Growth on Si (111)

Shohei Okuda

doi:https://doi.org/10.7567/SSDM.2023.PS-8-07

[PS-8-07] Control of Ge Nanowire Orientation in Selective-Area VLS Growth on Si (111)

^○Shohei Okuda¹, Shuma Yuzawa¹, Michiharu Makino¹, Wipakorn Jevasuwan², Naoki Fukata², Shinjiro Hara¹ (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ. (Japan), 2. Research Center for Materials Nanoarchitectonics, National Inst. for Materials Science (NIMS) (Japan))

https://doi.org/10.7567/SSDM.2023.PS-8-07

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Presentation information

[PS-8] 08: Low Dimensional Devices and Materials

[PS-8-07] Control of Ge Nanowire Orientation in Selective-Area VLS Growth on Si (111)

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