Statistical Model of Electronic Structure in Disordered Quantum Dots of InAs, InP, GaSb, and Si

Jin Hyong Lim

doi:https://doi.org/10.7567/SSDM.2023.PS-8-10

[PS-8-10] Statistical Model of Electronic Structure in Disordered Quantum Dots of InAs, InP, GaSb, and Si

^○Jin Hyong Lim¹, Nobuya Mori² (1. Univ. of Osaka (Japan), 2. Univ. of Osaka (Japan))

https://doi.org/10.7567/SSDM.2023.PS-8-10

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講演情報

[PS-8] 08: Low Dimensional Devices and Materials

[PS-8-10] Statistical Model of Electronic Structure in Disordered Quantum Dots of InAs, InP, GaSb, and Si

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