Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO2-HfO2-ZrO2 Superlattice Gate Dielectric

Kaixuan Li

Presentation information

Cancelled

Short Oral Presentation

02: Advanced and Emerging Memories / New Applications

[SO-PS-02] 02: Advanced and Emerging Memories / New Applications

Thu. Sep 7, 2023 1:30 PM - 2:18 PM Room K (234, Bldg. 2)

Session Chairs: Atsushi Himeno (Panasonic Holdings Corporation), Ming-Hsiu Lee (Macronix International Co., Ltd)

1:38 PM - 1:40 PM

[SO-PS-02-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO₂-HfO₂-ZrO₂ Superlattice Gate Dielectric

Kaixuan Li¹, Yue Peng¹, wenwu xiao^2,1, Yan Liu¹, Genquan Han¹, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China))

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Presentation information

[SO-PS-02] 02: Advanced and Emerging Memories / New Applications

[SO-PS-02-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO2-HfO2-ZrO2 Superlattice Gate Dielectric

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[SO-PS-02-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO₂-HfO₂-ZrO₂ Superlattice Gate Dielectric