2023 International Conference on Solid State Devices and Materials

講演情報

Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 13:30 〜 14:04 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

13:34 〜 13:36

[SO-PS-04-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang1,2, Xiaoli Tian1, Wei Wei1,2, Yun Bai1, Jilong Hao1, Chengyue Yang1, Yidan Tang1, Xinyu Liu1 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

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