A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang

講演情報

Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 13:30 〜 14:04 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

13:34 〜 13:36

[SO-PS-04-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang^1,2, Xiaoli Tian¹, ^○Wei Wei^1,2, Yun Bai¹, Jilong Hao¹, Chengyue Yang¹, Yidan Tang¹, Xinyu Liu¹ (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

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講演情報

[SO-PS-04] 04: Power / High‐speed Devices and Materials

[SO-PS-04-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

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