Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

Kazuhiro “-” TANAKA

講演情報

Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 13:30 〜 14:04 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

13:36 〜 13:38

[SO-PS-04-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

^○Kazuhiro “-” TANAKA¹, Masashi “-” KATO¹ (1. Nagoya Institute Technology (Japan))

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講演情報

[SO-PS-04] 04: Power / High‐speed Devices and Materials

[SO-PS-04-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

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