First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO<sub>2</sub> Interface

Shun - Matsuda

講演情報

Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 13:30 〜 14:04 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

13:38 〜 13:40

[SO-PS-04-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface

^○Shun - Matsuda¹, Toru - Akiyama¹, Tetsuo - Hatakeyama², Kenji - Shiraishi³, Takashi - Nakayama⁴ (1. Mie Univ. (Japan), 2. Toyama Pref. Univ. (Japan), 3. Nagoya Univ. (Japan), 4. Chiba Univ. (Japan))

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講演情報

[SO-PS-04] 04: Power / High‐speed Devices and Materials

[SO-PS-04-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO2 Interface

パスワード

[SO-PS-04-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface