First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO<sub>2</sub> Interface

Shun - Matsuda

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Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

Thu. Sep 7, 2023 1:30 PM - 2:04 PM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

1:38 PM - 1:40 PM

[SO-PS-04-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface

^○Shun - Matsuda¹, Toru - Akiyama¹, Tetsuo - Hatakeyama², Kenji - Shiraishi³, Takashi - Nakayama⁴ (1. Mie Univ. (Japan), 2. Toyama Pref. Univ. (Japan), 3. Nagoya Univ. (Japan), 4. Chiba Univ. (Japan))

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Presentation information

[SO-PS-04] 04: Power / High‐speed Devices and Materials

[SO-PS-04-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO2 Interface

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[SO-PS-04-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface