2023 International Conference on Solid State Devices and Materials

講演情報

印刷

Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 13:30 〜 14:04 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

13:42 〜 13:44

[SO-PS-04-07] First-principles calculation for SiC/SiO2 interface atomic structure after NO annealing

○Mizuho Ohmoto1, Naoki Komatsu1, Mitsuharu Uemoto1, Tomoya Ono1 (1. Univ. of Kobe (Japan))

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