2023 International Conference on Solid State Devices and Materials

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Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

Thu. Sep 7, 2023 1:30 PM - 2:04 PM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

1:42 PM - 1:44 PM

[SO-PS-04-07] First-principles calculation for SiC/SiO2 interface atomic structure after NO annealing

○Mizuho Ohmoto1, Naoki Komatsu1, Mitsuharu Uemoto1, Tomoya Ono1 (1. Univ. of Kobe (Japan))

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