2023 International Conference on Solid State Devices and Materials

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Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

Thu. Sep 7, 2023 1:30 PM - 2:04 PM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

1:44 PM - 1:46 PM

[SO-PS-04-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm2) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li1, Bo Li1, Zhengweng Ma1, Huakai Yang1, Shijie He1, Jiajun Han2, Yu Li1, Xiaohua Li1, Wei He1, ○Xinke - Liu1 (1. Shenzhen Univ. (China), 2. South China Normal Univ. (China))

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