Investigation of Top-gate MoS<sub>2</sub> FETs by Low-temperature ALD High-κ and Hydrazine Passivated Interface

Min- Kun Huang

13:52 〜 13:54

[SO-PS-08-12] Investigation of Top-gate MoS₂ FETs by Low-temperature ALD High-κ and Hydrazine Passivated Interface

^○Min- Kun Huang¹, Hsu-Tang Liao², William Cheng-Yu Ma², Yeong-Her Wang¹, Chun-Jung Su^3,4 (1. National Cheng Kung Univ. (Taiwan), 2. National Sun Yat-sen Univ. (Taiwan), 3. National Yang Ming Chiao Tung Univ. (Taiwan), 4. Taiwan Semiconductor Research Inst. (Taiwan))

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講演情報

[SO-PS-08] 08: Low Dimensional Devices and Materials

[SO-PS-08-12] Investigation of Top-gate MoS₂ FETs by Low-temperature ALD High-κ and Hydrazine Passivated Interface

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講演情報

[SO-PS-08] 08: Low Dimensional Devices and Materials

[SO-PS-08-12] Investigation of Top-gate MoS2 FETs by Low-temperature ALD High-κ and Hydrazine Passivated Interface

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[SO-PS-08-12] Investigation of Top-gate MoS₂ FETs by Low-temperature ALD High-κ and Hydrazine Passivated Interface