High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

Taishiro Koga

Presentation information

Short Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

Thu. Sep 7, 2023 1:30 PM - 2:10 PM Room M (431, Bldg. 4)

Session Chairs: Shingo Ogawa (Toray Research Center, Inc.), Taizoh Sadoh (Kyushu Univ.)

1:36 PM - 1:38 PM

[SO-PS-11-04] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

^○Taishiro Koga¹, Takaya Nagano¹, Kenta Moto¹, Keisuke Yamamoto¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

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Presentation information

[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[SO-PS-11-04] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

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