Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators

Chengyuan Dong

doi:https://doi.org/10.36463/idw.2019.0397

14:55 〜 15:15

[AMD1-4] Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators

*Chengyuan Dong¹, Guochao Liu¹, Ying Zhang¹, Guofeng Feng¹, Wen Zhang¹ (1. Shanghai Jiao Tong University (China))

flexible, a-IGZO TFT, Double-stacked Gate Insulator, PBS

https://doi.org/10.36463/idw.2019.0397

Double-stacked gate insulators (SiOx/TaOx) made flexible amorphous InGaZnO thin film transistors more stable under both mechanical bending and positive bias-stress, which was assumed to result from their better neutral plane position and front-channel interface states. A simple model was built to explain this improvement effect.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD1-4] Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators