A 200-ppi Full Color Active Matrix Micro-LED Display with Low-Temperature-Poly-Silicon TFT Backplane

Masaya Tamaki

doi:https://doi.org/10.36463/idw.2019.0429

17:50 〜 18:15

[AMD3-3(Invited)] A 200-ppi Full Color Active Matrix Micro-LED Display with Low-Temperature-Poly-Silicon TFT Backplane

*Masaya Tamaki¹, Sho Nakamitsu¹, Hiroaki Ito¹, Takanobu Suzuki¹, Masahiko Nishide¹, Kunio Imaizumi¹, Katsumi Yamanoguchi¹, Fanny Rahadian¹, Katsumi Aoki¹, Seiji Matsuda¹, Ryoichi Yokoyama¹ (1. Kyocera Corporation (Japan))

micro-LED, LTPS, TFT backplane, MPRT, HDR

https://doi.org/10.36463/idw.2019.0429

A 1.8-inch 200-ppi full color active matrix micro light emitting diode (LED) display prototype has been developed with a low-temperature-poly-silicon (LTPS) TFT backplane. The frame rate of 240Hz and the luminance of 2000nits, both of which are promising attributes for high motion image quality and high dynamic range (HDR) applications, being superior to existing display technologies, were achieved by our LTPS TFT technology.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD3-3(Invited)] A 200-ppi Full Color Active Matrix Micro-LED Display with Low-Temperature-Poly-Silicon TFT Backplane