09:00 〜 09:25
[AMD5-1(Invited)] Switching Characteristic Enhancement of P-type Cu2O TFTs
Oxide TFT, p-type semiconductor, Copper oxide
We propose three methods to enhance switching characteristics of p-type Cu2O thin film transistors (TFTs) by passivating the copper oxide TFTs with silicon dioxide (SiO2) using sputtering, oxidizing the back channel of copper oxide with hypochlorous acid (HClO), and doping gallium into the Cu2O film.