International Display Workshops Incorporated Association

9:50 AM - 10:10 AM

[AMD5-3] High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

*XUERU MEI2, HUAFEI XIE1, NIAN LIU2, MACAI LU2, Lei Wen2, Shujhih Chen2, Shengdong Zhang2, Chiayu Lee2, Xin Zhang2 (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))

In-Rich In-Ga-Sn-O, Top-Gate Self-Aligned (TGSA), Nanocrystalline Structure, High Mobility

https://doi.org/10.36463/idw.2019.0458

In-rich In-Ga-Sn-O film with nanocrystalline structure was prepared as the active layer for high mobility TFT. The prepared top-gate self-aligned TFTs using the IGTO film deposited at low O2 gas ratio and low power exhibited excellent transfer characteristics with high mobility of 25.33cm2/Vs, ss of 0.33V/decade, threshold voltage of 0.98V.