9:50 AM - 10:10 AM
[AMD5-3] High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures
In-Rich In-Ga-Sn-O, Top-Gate Self-Aligned (TGSA), Nanocrystalline Structure, High Mobility
In-rich In-Ga-Sn-O film with nanocrystalline structure was prepared as the active layer for high mobility TFT. The prepared top-gate self-aligned TFTs using the IGTO film deposited at low O2 gas ratio and low power exhibited excellent transfer characteristics with high mobility of 25.33cm2/Vs, ss of 0.33V/decade, threshold voltage of 0.98V.