High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

XUERU MEI

doi:https://doi.org/10.36463/idw.2019.0458

9:50 AM - 10:10 AM

[AMD5-3] High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

*XUERU MEI², HUAFEI XIE¹, NIAN LIU², MACAI LU², Lei Wen², Shujhih Chen², Shengdong Zhang², Chiayu Lee², Xin Zhang² (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))

In-Rich In-Ga-Sn-O, Top-Gate Self-Aligned (TGSA), Nanocrystalline Structure, High Mobility

https://doi.org/10.36463/idw.2019.0458

In-rich In-Ga-Sn-O film with nanocrystalline structure was prepared as the active layer for high mobility TFT. The prepared top-gate self-aligned TFTs using the IGTO film deposited at low O₂ gas ratio and low power exhibited excellent transfer characteristics with high mobility of 25.33cm²/Vs, ss of 0.33V/decade, threshold voltage of 0.98V.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD5-3] High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures