International Display Workshops General Incorporated Association

9:50 AM - 10:10 AM

[AMD5-3] High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

*XUERU MEI2, HUAFEI XIE1, NIAN LIU2, MACAI LU2, Lei Wen2, Shujhih Chen2, Shengdong Zhang2, Chiayu Lee2, Xin Zhang2 (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))

In-Rich In-Ga-Sn-O, Top-Gate Self-Aligned (TGSA), Nanocrystalline Structure, High Mobility

https://doi.org/10.36463/idw.2019.0458

Abstract password authentication.
Password is required to view the abstract. Please enter a password to authenticate.

Password