Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

11:30 AM - 11:55 AM

[AMD6-3(Invited)] Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

*Isao Suzumura¹, Toshihide Jinnai¹, Hajime Watakabe¹, Akihiro Hanada¹, Ryo Onodera¹, Tomoyuki Ito¹ (1. Japan Display Inc. (Japan))

Top-gate, Self-aligned, Oxide TFT, Short channel length, Ion implantation

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