International Display Workshops Incorporated Association

11:55 AM - 12:15 PM

[AMD6-4] Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility

*Nian Liu1, Huafei Xie2, Xueru Mei1, Macai Lu1, Lei Wen1, Shujhih Chen1, Shengdong Zhang2, Chiayu Lee1, Xin Zhang1 (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))

IGTO, High Mobility, Deposition Condition, top-gate self-aligned

https://doi.org/10.36463/idw.2019.0476

The effect of deposition condition of dielectric layer on top-gate self-aligned amorphous InGaSnO TFT have been discussed, higher N2O/SiH4 gas ratio and medium power are better. The resulting a-IGTO TFT at Gen.4.5 glass exhibited good uniformity and high mobility of 28.57cm2/Vs, sweep swing of 0.27 V/decade, threshold voltage of 0.53V