Nanostructured IGZO thin-film transistors with remarkably enhanced current density and on-off ratio

Kairong Huang

doi:https://doi.org/10.36463/idw.2019.0479

1:20 PM - 1:45 PM

[AMD7-1(Invited)] Nanostructured IGZO thin-film transistors with remarkably enhanced current density and on-off ratio

Kairong Huang¹, *Chuan Liu¹ (1. Sun Yat-sen University (China))

Thin-film transistor, oxide semiconductor, nanostructures

https://doi.org/10.36463/idw.2019.0479

We develop oxide TFTs with nanoscale and periodic degenerately doped heterostructures by using a strategy based on near-field nanolithography. These nanostructured TFTs remarkably enhanced in current density, compared with homogeneous IGZO TFTs. The on–off ratio was higher than 10⁹, with notably scaling effect with channel length.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD7-1(Invited)] Nanostructured IGZO thin-film transistors with remarkably enhanced current density and on-off ratio