Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

RAVINDRA NAIK BUKKE

doi:https://doi.org/10.36463/idw.2019.0482

1:45 PM - 2:05 PM

[AMD7-2] Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

*RAVINDRA NAIK BUKKE¹, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))

Lanthanum, Solution-process, Spray pyrolysis, Thin-film transistor, ZnO

https://doi.org/10.36463/idw.2019.0482

We studied the effect of lanthanum incorporation on the electrical properties of ZnO TFT fabricated by spray pyrolysis. The turn-on voltage (V_ON) shifts towards 0 V by La doping. Also, Subthreshold swing (SS) decreases significantly from 387 to 251 mV/dec, by incorporation of lanthanum in ZnO.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD7-2] Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor