International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

2019年11月27日 〜 2019年11月29日
Sapporo Convention Center

14:05 〜 14:25

[AMD7-3] Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

*Jong Beom Ko1, Seung-Hee Lee1, Sang-Hee Ko Park1 (1. Korea Advanced Institute of Science and Technology (Korea))

High mobility, Stability, Top-gate structure, oxide TFTs

https://doi.org/10.36463/idw.2019.0485

Top-gate self-aligned structured TFT is appropriate for the high-end display. However, it is hard to realize highly stable high mobility characteristics, because GI deposition affects active surface in top-gate structure. Here we realize highly stable high mobility oxide TFTs by using thermal-ALD and oxygen sourcing plasma treatment for GI process.