International Display Workshops General Incorporated Association

10:40 〜 13:10

[AMDp1-14] Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs

*Chuanbao Luo1, Qianyi Zhang1, Ziran Li1, Xuechao Ren1, Xiaolong Meng1, Dai Tian1, Bisheng Mo1, Xiaohu Wei1, Xialiang Yuan1, Shijian Qin1 (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

Cu diffusion, Barrier layer, Electrical characteristics, TOF-SIMS

https://doi.org/10.36463/idw.2019.0541

The research reveals the effect of Mo and MoTi film on the suppression of Cu diffusion for BCE structure of a-Si and a-IGZO devices during severe thermal process. Electrical characters depict that a-IGZO film is superior to a-Si for suppressing Cu diffusion, resulting from untraceable Cu signal in ToF-SIMS.