Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics

SeongCheol Jang

doi:https://doi.org/10.36463/idw.2019.0554

10:40 〜 13:10

[AMDp1-18L] Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics

*SeongCheol Jang¹, Kihyeon Bae¹, Kyung Jin Lee¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))

Low-temperature, Microwave annealing, Polymer Dielectric

https://doi.org/10.36463/idw.2019.0554

In this work, a-IGZO TFTs were fabricated at room temperature by the synergistic combination of microwave annealing and polymer gate dielectrics. a-IGZO TFTs were successfully fabricated at room temperature and show good electrical properties and stability.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMDp1-18L] Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics