International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[AMDp1-18L] Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics

*SeongCheol Jang1, Kihyeon Bae1, Kyung Jin Lee1, Hyun-Suk Kim1 (1. Chungnam National University (Korea))

Low-temperature, Microwave annealing, Polymer Dielectric

https://doi.org/10.36463/idw.2019.0554

In this work, a-IGZO TFTs were fabricated at room temperature by the synergistic combination of microwave annealing and polymer gate dielectrics. a-IGZO TFTs were successfully fabricated at room temperature and show good electrical properties and stability.