10:40 AM - 1:10 PM
[AMDp1-18L] Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics
Low-temperature, Microwave annealing, Polymer Dielectric
In this work, a-IGZO TFTs were fabricated at room temperature by the synergistic combination of microwave annealing and polymer gate dielectrics. a-IGZO TFTs were successfully fabricated at room temperature and show good electrical properties and stability.