International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[AMDp1-21L] Improved Mobility and Stability of Indium-free Oxide Thin Film Transistor by Metal Capping Layer

*Ji-Min Park1, Ho-Hyun Nahm2, Hyun-Suk Kim1 (1. Chungnam National University (Korea), 2. Korea Advanced Institute of Science and Technology (Korea))

thin film transistors, amorphous oxide semiconductors, BaSnO3, high mobility, stability

In this work, to get better electrical properties, metal capping layer and lift-off lithography process of a new type of Indium-free amorphous thin films and associated thin-film transistors (TFTs) were investigated. As a result, optimized TFTs showed high mobility (>30cm2/Vs) and excellent stability than conventional InZnO TFTs.