International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

2019年11月27日 〜 2019年11月29日
Sapporo Convention Center

10:40 〜 13:10

[AMDp1-23L] Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT

*Sori Jeon1, Kwang-Heum Lee1, Seung-Hee Lee1, Chi-Sun Hwang2, Sang-Hee Ko Park1 (1. Korea Advanced Institute of Science and Technology (KAIST) (Korea), 2. Electronics and Telecommunications Research Institute (ETRI) (Korea))

Low resistive Al metal, Contact resistance, Bottom-contact structure, Oxide TFT

https://doi.org/10.36463/idw.2019.0570

Vertical-TFT is a promising structure to realize ultra-high resolution displays. Especially, low-resistive Al-based source/drain is necessary to reduce RC delay. Since vertical-TFT is bottom-contact structure, source/drain is oxidized during InOx semiconductor deposition. Here, we present the quantitative analysis result of metal/active contact properties in top-gate bottom-contact structured TFT, mimicking vertical-TFT.