10:40 〜 13:10
[AMDp1-24L] High mobility p-type tin oxide thin-film by adopting passivation layer
p-type SnO, thin-film transistors, SiO2 passivation
The effects of SiO2 passivation on tin monoxide (SnO) semiconductor was investigated. In X-ray photoelectron spectroscopy studies revealed that the tail-state above valence band maximum was clearly detected in SiO2- capped SnO film which may improve the p-type conductivity. As a result, the resulting SnO thin-film transistors show enhanced electrical properties.