International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[AMDp1-25L] Photo-induced instability behaviors of IGZO TFTs caused by the reversible charge trapping

*ChangBum Park1, Ji Xiang Gong 1, Martin S1 (1. China Star Optoelectronics Semiconductor Display Technology (China))

IGZO transistor (TFT), photo-irradiation, charge trapping

https://doi.org/10.36463/idw.2019.0577

Photo-induced instability phenomena were investigated in IGZO TFT. The photo-responsivity behaviors attributed to the induced gate bias reveal that, resulting from their substantial trapping feature, photo-carriers (electrons and holes) activated in IGZO solid contribute differently to the negative shift Vth of the device. The bidirectional switching behavior under photo-irradiation also clearly indicates that the hysteresis enhancement predominantly comes from the long-lived reversible charge effect (holes) in n-type devices.