International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[AMDp1-6] Study on the Influence Factors of ESD Defect for a-IGZO TFT

*Ding Yuan Li1, Ru Wang Guo1, Tian Zhen Liu1, Xian Xue Duan1, Sang Jin Kim1, Sang Soo Park1, Ming Ming Chu1, Xin Hong Chen1, Li Li Wei1, Hai Feng Chen1, Wei Fang1 (1. BOE HF (China))

a-IGZO TFTs, Roughness, Sag, ESD

In this work, the influence factor for Electrostatic Dis-charge [ESD] on amorphous Indium Gallium Zinc Oxide Thin Film Transistors [a-IGZO TFTs] was studied using glass substrate with different properties. We identified glass back side roughness and sag have connection with ESD defect rate, the result showed higher glass substrate sag and lower back side roughness with higher ESD defect rate after process.