International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

2019年11月27日 〜 2019年11月29日
Sapporo Convention Center

10:40 〜 13:10

[AMDp1-8] Characteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield LayerCharacteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield Layer

*Qian Ma1,2, Xingyu Zhou2, YuanJun Hsu2, Yuanchun Wu2 (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

Top-gate Self-aligned, a-IGZO TFTs, Short channel TFT, stability

A top-gate self-aligned oxide amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) was examind for active matrix organic light-emitting diode (AMOLED) display. The device exhibited robust device performance, such as excellent threshold voltage uniformity, high mobility, and good gate bias stress stabilities. Furthermore, remarkable short channel characteristics were achieved.