International Display Workshops General Incorporated Association

16:00 〜 16:20

[DES2-3] Highly Reliable a-IGZO TFT Gate Driver Circuit to Suppress Threshold Voltage Shift of Pull-down TFT

*Jungwoo Lee1, Jongsu Oh1, Eun Kyo Jung1, KeeChan Park2, Jae-Hong Jeon3, Yong-Sang Kim1 (1. Sungkyunkwan University (Korea), 2. Konkuk University (Korea), 3. Korea Aerospace University (Korea))

Oxide TFT, Gate Driver Circuit, Reliability, Duty Ratio

https://doi.org/10.36463/idw.2019.1520

We present the highly reliable gate driver circuit using AC-driven method of a pull-down TFTs. Two pull-down TFTs are driven with duty ratio of 33.3% and 66.7%, respectively, VOUT discharge completely. The proposed circuit can minimize coupling noise by discharging the Q and VOUT node constantly except for output period.