International Display Workshops General Incorporated Association

4:20 PM - 4:40 PM

[DES2-4] Novel Driving Methods of Gate Driver Circuit for Depletion Mode Oxide TFTs

*Jongsu Oh1, Kyung-Mo Jung1, Soo-Yeon Lee2, KeeChan Park3, Jae-Hong Jeon4, Yong-Sang Kim1 (1. Sungkyunkwan University (Korea), 2. Seoul National University (Korea), 3. Konkuk University (Korea), 4. Korea Aerospace University (Korea))

Gate Driver Circuit, Thin-Film Transistor, Depletion Mode, Threshold Voltage, Reliability

https://doi.org/10.36463/idw.2019.1524

We introduce novel driving methods of pull-down unit in a gate driver circuit for enhancement and depletion mode a-IGZO thin-film transistors (TFTs). Using 3T1C diode connection structure, our circuit can compensate for VTH of pull-down unit in the enhancement mode and can be normally operated in the depletion mode.