International Display Workshops General Incorporated Association

09:50 〜 10:15

[FLX3-3(Invited)] Development of High Performance Semiconductor Inks for Printed Field-Effect Transistors For Flexible Display

Huihui Zhu1, Ao Liu1, Dongseob Ji1, *YONG-YOUNG NOH1 (1. Pohang University of Science and Technology (POSTECH) (Korea))

perovskite, carbon nanotube, thin film transistors

https://doi.org/10.36463/idw.2019.1592

Although organic-inorganic halide perovskites continue to generate considerable interest with the high potential to be widely applied in a variety of optoelectronic devices, there are some critical obstacles to practical applications such as the toxicity of lead, the relatively low field effect mobility and the strong hysteresis during operation. Here we develop a universal approach to significantly improve mobility and operational stability, and reduce the hysteresis of perovskite-based transistors simultaneously through coupling low-dimensional lead-free perovskite material (C6H5C2H4NH3)2SnI4 (hereafter abbreviated as (PEA)2SnI4) with embedded conjugated polymers wrapped semiconducting carbon nanotubes (semi-CNTs). In the (PEA)2SnI4/semi-CNTs hybrid systems, semi-CNTs can contribute as smooth tracks for carriers to transport with less scattering and trapping of perovskite grain boundaries. We also demonstrate the extraordinary performance of (PEA)2SnI4/semi-CNTs hybrid phototransistors with ultrahigh photoresponsitivity and photosensitivity, which is found to be on a par with the best devices available to date.