International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[FMCp1-2] High Performance GaN-based Micro-LEDs with Improved Ambient Contrast Ratio

*Ke Zhang1,2, Tingting Han3, Hoi-sing Kwok1,2, Zhaojun Liu1,2 (1. Hong Kong University of Science and Technology (Hong Kong), 2. Southern University of Science and Technology (China), 3. Shenzhen Refond Optoelectronics CO., LTD (China))

Micro-LED Display, Mini LED Display, Ambient Contrast Ratio

GaN-based Micro-LEDs have shown great potential in various filed, such as solid-state lighting, display, sensor, visible light communication and multifunctional devices. The performance of Micro-LEDs in various operating environment drew enormous attention recently. We report high performance Micro-LEDs on sapphire substrate with device size scaling to 30um and ultra-high current density of 100A/cm2 under applied bias of 4V. The Micro-LED devices can keep comparable performance after extreme environment test with an emission wavelength of 460nm. We also proposed three method to improve ambient contrast ratio including optical method, anti-reflection film and optimized device structure.