International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[FMCp3-8] Effects of Annealing Gas on Electrical Properties of La2O3 Gate Dielectrics

*Minjun Song1, Byoungdeog Choi1 (1. University of Sungkyunkwan (Korea))

MOS-Cs, high-k dielectric, La2O3, oxygen annealing, interface trap density

https://doi.org/10.36463/idw.2019.0721

Solution-processed lanthanum oxide(La2O3) films were formed on the Si substrates under N2 and O2 ambience annealing conditions. Compared to N2 conditions, flat-band voltage shifted to positive gate bias direction and leakage current was less for O2 annealed devices resulted from the reduction of the oxygen-related trap sites in the film.