Capacitance-Voltage Characteristics of Solution-Based HfZr-Silicate Gate Dielectrics

2:30 PM - 5:00 PM

[FMCp5-8L] Capacitance-Voltage Characteristics of Solution-Based HfZr-Silicate Gate Dielectrics

*Nara Lee¹, Pyungho Choi¹, Byoungdeog Choi¹ (1. Sungkunkwan University(Korea))

HfZr-Silicate, High-k dielectrics, MOS, Solution process

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