We have developed on electron beam (e-beam) lithography system with novel electron source using vertically aligned carbon nanotubes (VACNTs). After the beam was exposed, the PMMA film on ITO glass was developed in MIBK: IPA developer (MIBK: IPA=1:3). As a result, we observed lithography pattern less than 100 um without electric and magnetic lens. This cold cathode emitter is differentiated from the previous electron source for e-beam lithography.