International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

2019年11月27日 〜 2019年11月29日
Sapporo Convention Center

16:00 〜 16:20

[MEET6-4L] In-situ EUV Irradiation for Etching Residual Removal of AM Mini-LED

YONG DENG1, JUNLING LIU1, *MINLI TAN1, MIN XIONG1, LIANGYI CAI1, WENBO LIU1, QUANSHENG LIU1, YIFENG YANG1, RUI ZHAO1, WEIMIN ZHANG1 (1. Shenzhen China Star Optoelectronic Technology Company, Ltd. (China))

Mini-LED, EUV, Porous Structure, Etching Residual

https://doi.org/10.36463/idw.2019.1493

Given the demand of high current drive, AM Mini-LED backplane usually uses dense plum-blossom-type design to optimize hole lapping. However, this porous design leads to a serious M2 etching residual issue. By using in-situ EUV irradiation, the infiltration of etchant to porous structure can be increased and the etching residual can be removed without affecting electrical characteristics of the device.