“Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

Ji Eun Yeom

doi:https://doi.org/10.36463/idw.2019.0856

09:40 〜 10:00

[OLED4-3] “Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

*Ji Eun Yeom¹, Dong Hyun Shin¹, Mude Nagarjuna Naik¹, Raju Lampande¹, Jang Hyuk Kwon¹ (1. Kyung Hee University (Korea))

QLED, Quantum dot, Inverted structure, InP-QD

https://doi.org/10.36463/idw.2019.0856

Here, we report an efficient indium phosphate (InP) based inverted red Quantum Dot-Light Emitting Diodes (QLEDs) by incorporating a sol-gel processed Mg-doped ZnO layer. The red InP-QLED with our sol-gel processed Mg:ZnO layer reveals a maximum EQE of 7.7% , which is significantly higher than the ZnO and Mg:ZnO nanoparticles layers. These results suggest that the sol-gel processed Mg-doped ZnO layer is relatively efficient in terms of performances.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[OLED4-3] “Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”