10:40 〜 13:10
[OLEDp1-14L] Influence of Exciton-Polaron Quenching Occurring at the Interface Mixing Zone on the Operational Lifetime of Solution-Processed OLED
Device lifetime, solution-processed OLEDs, Exciton-Polaron Quenching, Recombination zone
The serious driving voltage rise in HOD could be evidence of EPQ causing device degradation. Strong deterioration was observed when the recombination-zone coincides with the interface-mixing zone, where a higher degree of EPQ occurs. Device lifetime was improved by 8 times as the recombination was confined away from interface mixing zone of solution-processed device.