10:40 AM - 1:10 PM
[PHp1-5L] Formation of ZnAl2O4 Thin Film for Deep Ultraviolet Emitting Phosphor and Evaluation of Luminescence Properties
ZnAl2O4 thin film, UV emission, Cathodoluminescence, Electron beam penetration depth
ZnAl2O4 thin films for deep UV emitting phosphor were prepared by thermal diffusion of ZnO and a-sapphire substrate at 1000 oC. From analysis of UV emission intensity by cathodoluminescence and penetration depth, it is considered that emiting layer of 650 nm was formed.